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Titanium Nitride Modified Photoluminescence from Single Semiconductor Nanoplatelets
Author(s) -
Peng Lintao,
Wang Xuejing,
Coropceanu Igor,
Martinson Alex B.,
Wang Haiyan,
Talapin Dmitri V.,
Ma Xuedan
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201904179
Subject(s) - materials science , titanium nitride , tin , photoluminescence , plasmon , optoelectronics , wavelength , dielectric , photonics , nitride , nanotechnology , layer (electronics) , metallurgy
Abstract Titanium nitride (TiN) is an alternative plasmonic material that has the potential for visible and near‐infrared optical applications due to its distinct properties. Here, coupling effects between TiN nanohole array films and nearby excitonic emitters, semiconductor nanoplatelets (NPLs), are investigated using single particle spectroscopy. At the emission wavelength of the NPLs, the local field enhancement close to the surface of the TiN nanohole array films induces an increase in the radiative decay rates of the emitters by a factor of up to 2. This effect diminishes quickly as the distance between the TiN nanohole array films and emitters increases. At short wavelengths where the NPLs are excited, the TiN nanohole array films exhibit lossy dielectric characteristics. Local field modification at these wavelengths leads to a reduced local density of electromagnetic states, and hence the photoluminescence intensity of the emitters. This study shows the potential of TiN as an alternative plasmonic material for optoelectronic and photonic applications, especially in the long wavelength ranges.