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Realization of Quantum Hall Effect in Chemically Synthesized InSe
Author(s) -
Yuan Kai,
Yin Ruoyu,
Li Xinqi,
Han Yimo,
Wu Meng,
Chen Shulin,
Liu Shuai,
Xu Xiaolong,
Watanabe Kenji,
Taniguchi Takashi,
Muller David A.,
Shi Junjie,
Gao Peng,
Wu Xiaosong,
Ye Yu,
Dai Lun
Publication year - 2019
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201904032
Subject(s) - materials science , semiconductor , electron mobility , indium , van der waals force , optoelectronics , quantum hall effect , nanotechnology , exfoliation joint , heterojunction , thin film , condensed matter physics , electron , graphene , physics , molecule , quantum mechanics
Recently, 2D electron gases have been observed in atomically thin semiconducting crystals, enabling the observation of rich physical phenomena at the quantum level within the ultimate thickness limit. However, the observation of 2D electron gases and subsequent quantum Hall effect require exceptionally high crystalline quality, rendering mechanical exfoliation as the only method to produce high‐quality 2D semiconductors of black phosphorus and indium selenide (InSe), which hinder large‐scale device applications. Here, the controlled one‐step synthesis of high‐quality 2D InSe thin films via chemical vapor transport method is reported. The carrier Hall mobility of hexagonal boron nitride (hBN) encapsulated InSe flakes can be up to 5000 cm 2 V −1 s −1 at 1.5 K, enabling to observe the quantum Hall effect in a synthesized van der Waals semiconductor. The existence of the quantum Hall effect in directly synthesized 2D semiconductors indicates a high quality of the chemically synthesized 2D semiconductors, which hold promise in quantum devices and applications with high mobility.