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Roadmap to Gigahertz Organic Transistors
Author(s) -
Zschieschang Ute,
Borchert James W.,
Giorgio Michele,
Caironi Mario,
Letzkus Florian,
Burghartz Joachim N.,
Waizmann Ulrike,
Weis Jürgen,
Ludwigs Sabine,
Klauk Hagen
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201903812
Subject(s) - transistor , materials science , field effect transistor , transit (satellite) , organic semiconductor , optoelectronics , engineering physics , electrical engineering , physics , voltage , engineering , public transport , transport engineering
Despite the large body of research conducted on organic transistors, the transit frequency of organic field‐effect transistors has seen virtually no improvement for a decade and remains far below 1 GHz. One reason is that most of the research is still focused on improving the charge‐carrier mobility, a parameter that has little influence on the transit frequency of short‐channel transistors. By examining the fundamental equations for the transit frequency of field‐effect transistors and by extrapolating recent progress on the relevant device parameters, a roadmap to gigahertz organic transistors is derived.