Premium
Antiambipolar Transistor: A Newcomer for Future Flexible Electronics
Author(s) -
Wakayama Yutaka,
Hayakawa Ryoma
Publication year - 2020
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201903724
Subject(s) - transistor , materials science , electronics , static induction transistor , optoelectronics , electronic circuit , flexible electronics , semiconductor , field effect transistor , nanotechnology , transistor array , multiple emitter transistor , voltage , electrical engineering , engineering
An antiambipolar transistor exhibits a steep increase and decrease in drain current within a certain range of gate bias voltage. This unique feature is brought about by a partially stacked pn‐heterointerface formed around the center of the transistor channel. First, this review discusses recent topics related to the antiambipolar transistor, including the constituent materials, operation mechanism, and factors controlling device performance. Then, novel functional applications, such as optoelectronics and multivalued logic circuits, are introduced. The transistor channels of antiambipolar transistors consist largely of 2D atomically thin films or organic semiconductors. These materials are mechanically flexible. Therefore, antiambipolar transistors have the potential to enable advances to be made in the field of flexible electronics.