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Atom‐by‐Atom Fabrication of Single and Few Dopant Quantum Devices
Author(s) -
Wyrick Jonathan,
Wang Xiqiao,
Kashid Ranjit V.,
Namboodiri Pradeep,
Schmucker Scott W.,
Hagmann Joseph A.,
Liu Keyi,
Stewart Michael D.,
Richter Curt A.,
Bryant Garnett W.,
Silver Richard M.
Publication year - 2019
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201903475
Subject(s) - materials science , fabrication , dopant , quantum sensor , quantum technology , quantum , transistor , quantum computer , atom (system on chip) , optoelectronics , nanotechnology , quantum network , physics , quantum mechanics , doping , computer science , open quantum system , embedded system , medicine , alternative medicine , pathology , voltage
Atomically precise fabrication has an important role to play in developing atom‐based electronic devices for use in quantum information processing, quantum materials research, and quantum sensing. Atom‐by‐atom fabrication has the potential to enable precise control over tunnel coupling, exchange coupling, on‐site charging energies, and other key properties of basic devices needed for solid‐state quantum computing and analog quantum simulation. Using hydrogen‐based scanning probe lithography, individual dopant atoms are deterministically placed relative to atomically aligned contacts and gates to build single electron transistors, single atom transistors, and gate‐controlled quantum sensing devices. The key steps required to fabricate and demonstrate the essential building blocks needed for spin selective initialization/readout and coherent quantum manipulation are described.