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Mo 6 S 3 Br 6 : An Anisotropic 2D Superatomic Semiconductor
Author(s) -
Zhong Xinjue,
Lee Kihong,
Meggiolaro Daniele,
Dismukes Avalon H.,
Choi Bonnie,
Wang Feifan,
Nuckolls Colin,
Paley Daniel W.,
Batail Patrick,
De Angelis Filippo,
Roy Xavier,
Zhu XiaoyangY.
Publication year - 2019
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201902951
Subject(s) - materials science , anisotropy , semiconductor , van der waals force , raman spectroscopy , condensed matter physics , density functional theory , spectroscopy , black phosphorus , electronic structure , optoelectronics , computational chemistry , optics , physics , molecule , chemistry , quantum mechanics
Abstract Two‐dimensional (2D) van der Waals materials with in‐plane anisotropy are of great interest for directional transport of charge and energy, as exemplified by recent studies on black phosphorus and α‐phase molybdenum trioxide (α‐MO 3 ). Here, a layered van der Waals semiconductor with in‐plane anisotropy built upon the superatomic units of Mo 6 S 3 Br 6 is reported. This material possesses robust 2D characteristics with a direct gap of 1.64 eV, as determined by scanning tunneling spectroscopy and first‐principles calculations. Polarization‐dependent Raman spectroscopy measurement and density functional theory calculation reveal strong in‐plane anisotropy. These results suggest an effective strategy to explore anisotropic 2D electronic and optoelectronic properties from superatomic building blocks with multifunctionality, emergent properties, and hierarchical control.