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Magnetic Field‐Enhanced Thermoelectric Performance in Dirac Semimetal Cd 3 As 2 Crystals with Different Carrier Concentrations
Author(s) -
Wang Honghui,
Luo Xigang,
Peng Kunling,
Sun Zeliang,
Shi Mengzhu,
Ma Donghui,
Wang Naizhou,
Wu Tao,
Ying Jianjun,
Wang Zhengfei,
Chen Xianhui
Publication year - 2019
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201902437
Subject(s) - materials science , thermoelectric effect , semimetal , condensed matter physics , thermal conductivity , dirac (video compression format) , figure of merit , magnetic field , seebeck coefficient , crystal (programming language) , physics , optoelectronics , thermodynamics , band gap , quantum mechanics , computer science , nuclear physics , neutrino , composite material , programming language
Abstract The magneto‐thermoelectric figure of merit ( ZT ) in crystals of the topological Dirac semimetal Cd 3 As 2 with different carrier concentrations is studied. The ZT s for all the crystals increase with the temperature and show maxima at high temperatures. Meanwhile, the temperatures corresponding to the ZT  maxima increase with the carrier concentration. The limit to the improvement in ZT ( T ) at high temperature could be related to the unusual large enhancement in thermal conductivity at elevated temperatures. The bipolar effect and Dirac liquid behavior are presented as processes possibly responsible for the peculiar behavior of the thermal conductivity. Applying a transverse magnetic field initially leads to a dramatic enhancement and, subsequently, to a slight reduction in ZT for all the crystals. The maximum ZT achieved in a magnetic field increases with the carrier concentration and reaches 1.24 at 450 K in a magnetic field of 9 T for the crystal with the highest carrier concentration. It is expected that this work will be beneficial to the current interests in optimizing the thermoelectric properties of quantum topological materials.

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