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Zr‐Doped Indium Oxide (IZRO) Transparent Electrodes for Perovskite‐Based Tandem Solar Cells
Author(s) -
Aydin Erkan,
De Bastiani Michele,
Yang Xinbo,
Sajjad Muhammad,
Aljamaan Faisal,
Smirnov Yury,
Hedhili Mohamed Nejib,
Liu Wenzhu,
Allen Thomas G.,
Xu Lujia,
Van Kerschaver Emmanuel,
MoralesMasis Monica,
Schwingenschlögl Udo,
De Wolf Stefaan
Publication year - 2019
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201901741
Subject(s) - materials science , indium tin oxide , optoelectronics , indium , electrode , perovskite (structure) , sheet resistance , transparent conducting film , doping , oxide , tandem , crystallinity , thin film , nanotechnology , chemical engineering , composite material , layer (electronics) , metallurgy , chemistry , engineering
Parasitic absorption in transparent electrodes is one of the main roadblocks to enabling power conversion efficiencies (PCEs) for perovskite‐based tandem solar cells beyond 30%. To reduce such losses and maximize light coupling, the broadband transparency of such electrodes should be improved, especially at the front of the device. Here, the excellent properties of Zr‐doped indium oxide (IZRO) transparent electrodes for such applications, with improved near‐infrared (NIR) response, compared to conventional tin‐doped indium oxide (ITO) electrodes, are shown. Optimized IZRO films feature a very high electron mobility (up to ≈77 cm 2 V −1 s −1 ), enabling highly infrared transparent films with a very low sheet resistance (≈18 Ω □ −1 for annealed 100 nm films). For devices, this translates in a parasitic absorption of only ≈5% for IZRO within the solar spectrum (250–2500 nm range), to be compared with ≈10% for commercial ITO. Fundamentally, it is found that the high conductivity of annealed IZRO films is directly linked to promoted crystallinity of the indium oxide (In 2 O 3 ) films due to Zr‐doping. Overall, on a four‐terminal perovskite/silicon tandem device level, an absolute 3.5 mA cm −2 short‐circuit current improvement in silicon bottom cells is obtained by replacing commercial ITO electrodes with IZRO, resulting in improving the PCE from 23.3% to 26.2%.