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Quasiepitaxy Strategy for Efficient Full‐Inorganic Sb 2 S 3 Solar Cells
Author(s) -
Deng Hui,
Zeng Yiyu,
Ishaq Muhammad,
Yuan Shengjie,
Zhang Huan,
Yang Xiaokun,
Hou Mingming,
Farooq Umar,
Huang Jialiang,
Sun Kaiwen,
Webster Richard,
Wu Hao,
Chen Zhenhua,
Yi Fei,
Song Haisheng,
Hao Xiaojing,
Tang Jiang
Publication year - 2019
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201901720
Subject(s) - materials science , tandem , energy conversion efficiency , optoelectronics , antimony , trapping , solar cell , epitaxy , open circuit voltage , photovoltaic system , monocrystalline silicon , band gap , silicon , nanotechnology , layer (electronics) , voltage , composite material , physics , ecology , quantum mechanics , metallurgy , biology
Antimony sulfide (Sb 2 S 3 ) as a wide‐bandgap, nontoxic, and stable photovoltaic material reveals great potential for the uppermost cells in Si‐based tandem cell stacks. Sb 2 S 3 solar cells with a compatible process, acceptable cost, and high efficiency therefore become the mandatory prerequisites to match silicon bottom cells. The performance of vacuum processed Sb 2 S 3 device is pinned by bulk and interfacial recombination. Herein, a thermally treated TiO 2 buffer layer induces quasiepitaxial growth of vertical orientation Sb 2 S 3 absorber overcoming interface defects and absorber transport loss. Such novel growth could pronouncedly improve the open‐circuit voltage ( V oc ) due to the superior interface quality and intraribbon transport. The epitaxial rough Sb 2 S 3 surface shows a texturized‐like morphology. It is optimized by tuning the grain sizes to form strong light trapping effect, which further enhances the short‐circuit current density ( J sc ) with a 16% improvement. The final optimal device with high stability obtains a power conversion efficiency of 5.4%, which is the best efficiency for full‐inorganic Sb 2 S 3 solar cells. The present developed quasiepitaxy strategy supports a superior interface, vertical orientation, and surface light trapping effect, which provides a new perspective for efficient noncubic material thin film solar cells.