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Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application
Author(s) -
Wang Lin,
Liao Wugang,
Wong Swee Liang,
Yu Zhi Gen,
Li Sifan,
Lim YeeFun,
Feng Xuewei,
Tan Wee Chong,
Huang Xin,
Chen Li,
Liu Liang,
Chen Jingsheng,
Gong Xiao,
Zhu Chunxiang,
Liu Xinke,
Zhang YongWei,
Chi Dongzhi,
Ang KahWee
Publication year - 2019
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201901106
Subject(s) - neuromorphic engineering , memristor , materials science , terminal (telecommunication) , spike timing dependent plasticity , computer science , von neumann architecture , resistive random access memory , optoelectronics , artificial neural network , nanotechnology , long term potentiation , electronic engineering , voltage , artificial intelligence , electrical engineering , engineering , chemistry , telecommunications , biochemistry , receptor , operating system
Neuromorphic computing, which emulates the biological neural systems could overcome the high‐power consumption issue of conventional von‐Neumann computing. State‐of‐the‐art artificial synapses made of two‐terminal memristors, however, show variability in filament formation and limited capacity due to their inherent single presynaptic input design. Here, a memtransistor‐based articial synapse is realized by integrating a memristor and selector transistor into a multiterminal device using monolayer polycrys‐talline‐MoS 2 grown by a scalable chemical vapor deposition (CVD) process. Notably, the memtransistor offers both drain‐ and gate‐tunable nonvolatile memory functions, which efficiently emulates the long‐term potentiation/depression, spike‐amplitude, and spike‐timing‐dependent plasticity of biological synapses. Moreover, the gate tunability function that is not achievable in two‐terminal memristors, enables significant bipolar resistive states switching up to four orders‐of‐magnitude and high cycling endurance. First‐principles calculations reveal a new resistive switching mechanism driven by the diffusion of double sulfur vacancy perpendicular to the MoS 2 grain boundary, leading to a conducting switching path without the need for a filament forming process. The seamless integration of multiterminal memtransistors may offer another degree‐of‐freedom to tune the synaptic plasticity by a third gate terminal for enabling complex neuromorphic learning.