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Polarization‐Sensitive Ultraviolet Photodetection of Anisotropic 2D GeS 2
Author(s) -
Yang Yusi,
Liu ShunChang,
Wang Xia,
Li Zongbao,
Zhang Yun,
Zhang Gengmin,
Xue DingJiang,
Hu JinSong
Publication year - 2019
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201900411
Subject(s) - photodetection , semiconductor , materials science , optoelectronics , photodetector , polarization (electrochemistry) , anisotropy , ultraviolet , band gap , visible spectrum , optics , physics , chemistry
Polarization‐sensitive photodetection in the UV region is highly indispensable in many military and civilian applications. UV‐polarized photodetection usually relies on the use of wide bandgap semiconductors with 1D nanostructures requiring complicated nanofabrication processes. Although the emerging anisotropic 2D semiconductors shed light on the detection of polarization with a simple device architecture, bandgaps of such reported 2D semiconductors are too small to be applied for visible–blind UV‐polarized photodetection. Here, germanium disulfide (GeS 2 ), the widest bandgap (>3 eV) in the family of in‐plane anisotropic 2D semiconductors explored to date, is introduced as an ideal candidate for UV‐polarized photodetection. The structural, vibrational, and optical anisotropies of GeS 2 are systematically investigated from theory to experiment. GeS 2 ‐based photodetectors show a strong polarization‐dependent photoresponse in the UV region. GeS 2 with a wide bandgap and high in‐plane anisotropy not only enriches the family of anisotropic 2D semiconductors but also expands the polarized photodetection from the current visible and near‐infrared to the brand‐new UV region.