Transient Electronics: High‐Temperature‐Triggered Thermally Degradable Electronics Based on Flexible Silicon Nanomembranes (Adv. Funct. Mater. 45/2018)

In article number 1801448 , Yongfeng Mei and co‐workers report a distinct and irreversible transient process of flexible single crystal silicon nanomembrane devices at 300 °C. Integrating high‐temperature degradable poly‐α‐methylstyrene (PAMS) interlayer in silicon nanomembrane devices allows for stable operation below the decomposition temperature of PAMS (∼ 300 °C), while higher temperatures trigger a self‐destruction process. This work provides advantages for circuit safeguards, information security, and sensing/control systems in high‐temperature electronics.