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Transient Electronics: High‐Temperature‐Triggered Thermally Degradable Electronics Based on Flexible Silicon Nanomembranes (Adv. Funct. Mater. 45/2018)
Author(s) -
Li Gongjin,
Song Enming,
Huang Gaoshan,
Guo Qinglei,
Ma Fei,
Zhou Bin,
Mei Yongfeng
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201870323
Subject(s) - materials science , electronics , silicon , transient (computer programming) , flexible electronics , nanotechnology , optoelectronics , work (physics) , electrical engineering , mechanical engineering , computer science , engineering , operating system
In article number 1801448 , Yongfeng Mei and co‐workers report a distinct and irreversible transient process of flexible single crystal silicon nanomembrane devices at 300 °C. Integrating high‐temperature degradable poly‐α‐methylstyrene (PAMS) interlayer in silicon nanomembrane devices allows for stable operation below the decomposition temperature of PAMS (∼ 300 °C), while higher temperatures trigger a self‐destruction process. This work provides advantages for circuit safeguards, information security, and sensing/control systems in high‐temperature electronics.