Premium
Field‐Effect Transistors: Thickness‐Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic (Adv. Funct. Mater. 43/2018)
Author(s) -
Zhong Mianzeng,
Xia Qinglin,
Pan Longfei,
Liu Yuqing,
Chen Yabin,
Deng HuiXiong,
Li Jingbo,
Wei Zhongming
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201870312
Subject(s) - arsenic , materials science , semiconductor , field effect transistor , optoelectronics , crystal (programming language) , transistor , chemical physics , condensed matter physics , nanotechnology , metallurgy , chemistry , physics , quantum mechanics , voltage , computer science , programming language
In article 1802581 , Zhongming Wei and co‐workers describe the layered crystal structure for a new 2D elemental semiconductor consisting of black arsenic (b‐As). The image also shows the Chinese character of the “As” element. The reported b‐As is more stable under ambient conditions than black phosphorous and could be obtained from natural mineral.