Premium
Photodetectors: Design Principles and Material Engineering of ZnS for Optoelectronic Devices and Catalysis (Adv. Funct. Mater. 36/2018)
Author(s) -
Xu Xiaojie,
Li Siyuan,
Chen Jiaxin,
Cai Sa,
Long Zhenghao,
Fang Xiaosheng
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201870256
Subject(s) - photodetector , materials science , ultraviolet , optoelectronics , semiconductor , nanotechnology , electrical conductor , composite material
The unique optoelectronic properties of ZnS make for an excellent transparent semiconductor that turns ultraviolet radiation into electrical signals. In article number 1802029 , Xiaosheng Fang and co‐workers comprehensively summarize the recent breakthroughs in research on ZnS and propose design principles and engineering techniques for tailoring ZnS toward improved/novel optoelectronic properties, which enable applications including transparent conductors, UV photodetectors, luminescent devices, and catalysts.