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Photodetectors: Ultrasensitive Room‐Temperature Terahertz Direct Detection Based on a Bismuth Selenide Topological Insulator (Adv. Funct. Mater. 31/2018)
Author(s) -
Tang Weiwei,
Politano Antonio,
Guo Cheng,
Guo Wanlong,
Liu Changlong,
Wang Lin,
Chen Xiaoshuang,
Lu Wei
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201870219
Subject(s) - topological insulator , photodetection , terahertz radiation , materials science , photodetector , photonics , optoelectronics , bismuth , insulator (electricity) , nanotechnology , physics , condensed matter physics , metallurgy
In article number 1801786 , Lin Wang, Xiaoshuang Chen, and their co‐workers propose a metal‐topological insulator–metal subwavelength structure for ultrasensitivity, room temperature terahertz photodetection. The integration of a topological insulator and micro structures exploits the unique properties of topological surface states and opens up a new route for fast imaging applications, promising a superb impact on THz optoelectronics.