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Field‐Effect Transistors: High Performance p‐ and n‐Type Light‐Emitting Field‐Effect Transistors Employing Thermally Activated Delayed Fluorescence (Adv. Funct. Mater. 28/2018)
Author(s) -
Sobus Jan,
Bencheikh Fatima,
Mamada Masashi,
Wawrzinek Robert,
Ribierre JeanCharles,
Adachi Chihaya,
Lo ShihChun,
Namdas Ebinazar B.
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201870193
Subject(s) - materials science , transistor , stack (abstract data type) , optoelectronics , fluorescence , field effect transistor , field (mathematics) , optics , electrical engineering , physics , mathematics , voltage , computer science , pure mathematics , programming language , engineering
Light‐Emitting Field‐Effect Transistors (LEFETs) are a novel class of optoelectronic devices combining switching and light emission properties in a single material stack. In article number 1800340 , Chihaya Adachi, Shih‐Chun Lo, Ebinazar B. Namdas, and co‐workers succeed in constructing the first p‐type and n‐type LEFETs employing TADF organic material. Experimental data is supported by numerical simulation, leading to proper localization of the recombination zone and identification of loss pathways.