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Molecular Electronics: The Drive Force of Electrical Breakdown of Large‐Area Molecular Tunnel Junctions (Adv. Funct. Mater. 28/2018)
Author(s) -
Yuan Li,
Jiang Li,
Nijhuis Christian A.
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201870192
Subject(s) - materials science , electromigration , eutectic system , monolayer , metal , alloy , electrode , electrical breakdown , nanotechnology , composite material , optoelectronics , metallurgy , chemistry , dielectric
In article number 1801710 , Christian A. Nijhuis and co‐workers investigate the mechanism of electrical breakdown of molecular tunnel junctions with self‐assembled monolayers sandwiched between ultra‐flat metal surfaces and liquid metal EGaIn (eutectic alloy of Ga and In). The process of breakdown is dominated by the electromigration of metallic atoms from the electrodes induced by wind force. (Image credit: Harshini V. Annadata).