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Van Der Waals Epitaxy: Ultrasensitive Photoresponsive Devices Based on Graphene/BiI 3 van der Waals Epitaxial Heterostructures (Adv. Funct. Mater. 23/2018)
Author(s) -
Chang PoHan,
Li ChiaShuo,
Fu FangYu,
Huang KuoYou,
Chou AngSheng,
Wu ChihI
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201870160
Subject(s) - van der waals force , materials science , graphene , heterojunction , epitaxy , bismuth , optoelectronics , nanotechnology , layer (electronics) , molecule , physics , quantum mechanics , metallurgy
In article number 1800179 , Chih‐I Wu and co‐workers demonstrate that epitaxial growth of layered bismuth iodide (BiI 3 ) on graphene shows flat morphologies and excellent crystallinities because of weak van der Waals interactions at the graphene/BiI 3 interface. Hybrid photodetectors based on graphene/BiI 3 heterostructures demonstrate superior photosensitivity and fast response time. Image designed by Siang‐Jyuan Yan, Chia‐Shuo Li, and Po‐Han Chang.