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Thermoelectrics: Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering (Adv. Funct. Mater. 22/2018)
Author(s) -
Yalamarthy Ananth Saran,
So Hongyun,
Muñoz Rojo Miguel,
Suria Ateeq J.,
Xu Xiaoqing,
Pop Eric,
Senesky Debbie G.
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201870152
Subject(s) - heterojunction , materials science , optoelectronics , buffer (optical fiber) , electronics , phonon , thermal , layer (electronics) , electron transport chain , thermoelectric materials , nanotechnology , thermal conductivity , condensed matter physics , electrical engineering , composite material , physics , botany , meteorology , biology , engineering
In article 1705823 , Hongyun So, Debbie G. Senesky, Eric Pop, and co‐workers describe the ability to manipulate electrical transport separately from thermal transport by leveraging the 2‐dimensional electron gas in AlGaN/GaN heterostructures. The image shows the transport of electrons and phonons in the heterostructure, which, under a thermal gradient, can be used for on‐chip thermal sensing and energy harvesting within power electronics modules.