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Photodetectors: Fast, Self‐Driven, Air‐Stable, and Broadband Photodetector Based on Vertically Aligned PtSe 2 /GaAs Heterojunction (Adv. Funct. Mater. 16/2018)
Author(s) -
Zeng LongHui,
Lin ShengHuang,
Li ZhongJun,
Zhang ZhiXiang,
Zhang TengFei,
Xie Chao,
Mak ChunHin,
Chai Yang,
Lau Shu Ping,
Luo LinBao,
Tsang Yuen Hong
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201870106
Subject(s) - materials science , responsivity , heterojunction , photodetector , optoelectronics , broadband , ultraviolet , infrared , optics , physics
Group‐10 transition metal dichalcogenides like PtSe 2 have been widely highlighted for various potential applications. In article number 1705970 , Lin‐Bao Luo, Yuen Hong Tsang and co‐workers synthesize large‐area, high‐quality and vertically aligned PtSe 2 films through a simple selenization method. Optoelectronic characterization reveals that PtSe 2 ‐GaAs heterojunctions exhibit high responsivity, fast response speed, and broadband sensitivity to illumination ranging from deep ultraviolet to near infrared light.