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Monolayer Semiconductors: Electron Field Emission of Geometrically Modulated Monolayer Semiconductors (Adv. Funct. Mater. 7/2018)
Author(s) -
Yang TungHan,
Chiu KuanChang,
Harn YeuWei,
Chen HanYi,
Cai RenFong,
Shyue JingJong,
Lo ShenChuan,
Wu JennMing,
Lee YiHsien
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201870046
Subject(s) - monolayer , semiconductor , materials science , semiconductor nanostructures , electron , electric field , nanotechnology , field electron emission , modulation (music) , nanostructure , optoelectronics , condensed matter physics , physics , quantum mechanics , acoustics
Recently, engineering of 2D semiconductors has been widely highlighted for diverse potential applications. In article number 1706113 , Yi‐Hsien Lee and co‐workers report highly efficient and stable electron emission of monolayer semiconductors in low turn‐on electric fields. Geometrical control by integrating 1D nanostructure arrays for geometrical modulation is key to this achievement.