Premium
Threshold Switching: Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications (Adv. Funct. Mater. 6/2018)
Author(s) -
Wang Zhongrui,
Rao Mingyi,
Midya Rivu,
Joshi Saumil,
Jiang Hao,
Lin Peng,
Song Wenhao,
Asapu Shiva,
Zhuo Ye,
Li Can,
Wu Huaqiang,
Xia Qiangfei,
Yang J. Joshua
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201870036
Subject(s) - neuromorphic engineering , materials science , memristor , dielectric , optoelectronics , electronics , mechanism (biology) , resistive random access memory , conductance , non volatile memory , nanotechnology , thermal conduction , engineering physics , electrical engineering , condensed matter physics , computer science , voltage , composite material , artificial intelligence , engineering , physics , quantum mechanics , artificial neural network
Threshold switching memristors with Ag or Cu active metal species feature a spontaneous rupture of conduction channels. As reviewed by Huaqiang Wu, Qiangfei Xia, J. Joshua Yang, and co‐workers in article number 1704862 , their unique temporal conductance evolution finds a variety of novel applications in electronics, ranging from building blocks for neuromorphic computing and security solutions, to selector devices in 3D memory arrays.