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Memristors: Memristive Logic‐in‐Memory Integrated Circuits for Energy‐Efficient Flexible Electronics (Adv. Funct. Mater. 2/2018)
Author(s) -
Jang Byung Chul,
Nam Yunyong,
Koo Beom Jun,
Choi Junhwan,
Im Sung Gap,
Park SangHee Ko,
Choi SungYool
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201870008
Subject(s) - memristor , materials science , substrate (aquarium) , electronic circuit , amorphous solid , row , optoelectronics , memistor , resistive random access memory , flexible electronics , nanotechnology , energy (signal processing) , logic gate , electronics , electrical engineering , computer science , physics , quantum mechanics , engineering , voltage , crystallography , oceanography , chemistry , database , geology
In article number 1704275 , Sang‐Hee Ko Park, Sung‐Yool Choi and co‐workers develope a one selectorone memristor (1S‐1M) integrated circuit using a poly(1,3,5‐trivinyl‐1,3,5‐trimethyl cyclotrisiloxane) (pV3D3)‐based memristor and an amorphous In‐Zn‐Sn‐O (a‐IZTO)‐based selector on a flexible polyethersulfone (PES) substrate. The developed 1S‐1M devices successfully implement Single‐Instruction Multiple‐Data on the basis of parallel computing by performing NOT and NOR gates over multiple rows within the 1S‐1M array.