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Synthesis and Properties of Plasmonic Boron‐Hyperdoped Silicon Nanoparticles
Author(s) -
Rohani Parham,
Banerjee Soham,
SharifiAsl Soroosh,
Malekzadeh Mohammad,
ShahbazianYassar Reza,
Billinge Simon J. L.,
Swihart Mark T.
Publication year - 2019
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201807788
Subject(s) - materials science , doping , silicon , dopant , nanoparticle , surface plasmon resonance , semiconductor , transmission electron microscopy , boron , analytical chemistry (journal) , chemical engineering , nanotechnology , optoelectronics , chemistry , chromatography , engineering , organic chemistry
Electronic properties of silicon, the most important semiconductor material, are controlled through doping. The range of achievable properties can be extended by hyperdoping, i.e., doping to concentrations beyond the nominal equilibrium solubility of the dopant. Here, hyperdoping is achieved in a laser pyrolysis reactor capable of providing nonequilibrium conditions, where doping is governed by kinetics rather than thermodynamics. High resolution scanning transmission electron microscopy (TEM) with energy‐dispersive X‐ray spectroscopy shows that the boron atom distribution in the hyperdoped nanoparticles is relatively uniform. The hyperdoped nanoparticles demonstrate tunable localized surface plasmon resonance (LSPR) and are stable in air for periods of at least one year. The hyperdoped nanoparticles are also stable upon annealing at temperatures up to 600 °C. Furthermore, boron hyperdoping does not change the diamond cubic crystal structure of silicon, as demonstrated in detail by high flux synchrotron X‐ray diffraction and pair distribution function (PDF) analysis, supported by high‐resolution TEM analysis.