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Conformational Domain Wall Switch
Author(s) -
Sharma Pankaj,
Sando Daniel,
Zhang Qi,
Cheng Xiaoxing,
Prosandeev Sergey,
Bulanadi Ralph,
Prokhorenko Sergei,
Bellaiche Laurent,
Chen LongQing,
Nagarajan Valanoor,
Seidel Jan
Publication year - 2019
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201807523
Subject(s) - piezoresponse force microscopy , ferroelectricity , materials science , domain wall (magnetism) , nanoscopic scale , domain (mathematical analysis) , hinge , nanoelectronics , anisotropy , nanotechnology , electric field , thermal conduction , head (geology) , condensed matter physics , optoelectronics , optics , physics , classical mechanics , composite material , mathematical analysis , magnetization , geomorphology , geology , mathematics , quantum mechanics , magnetic field , dielectric
Domain walls in ferroelectric materials have tantalizing potential in disruptive memory and reconfigurable nanoelectronics technologies. Here, a ferroelectric domain wall switch with three distinct addressable resistance states is demonstrated. The device operation hinges on fully controllable and reversible conformational changes of the domain wall. As validated by atomistic simulations consistent with the experiments, using electric field, the shape—and hence the charge state—of the domain wall and ultimately its conduction are altered. Sequential nanoscale transitions of the walls are visualized directly using stroboscopic‐piezoresponse force microscopy and Kelvin probe microscopy. Anisotropic head‐to‐head domain wall injection, stabilized by the majority carrier type of the ferroelectric, BiFeO 3 , is identified as the key factor that enables conformational control.