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Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization
Author(s) -
Zhong Hai,
Wen Yan,
Zhao Yuelei,
Zhang Qiang,
Huang Qikun,
Chen Yanxue,
Cai Jianwang,
Zhang Xixiang,
Li Runwei,
Bai Lihui,
Kang Shishou,
Yan Shishen,
Tian Yufeng
Publication year - 2019
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201806460
Subject(s) - remanence , spintronics , magnetism , materials science , non volatile memory , condensed matter physics , ferromagnetism , magnetic anisotropy , magnetization , engineering physics , magnetic field , optoelectronics , physics , quantum mechanics
Emerging nonvolatile multilevel memory devices have been regarded as a promising solution to meet the increasing demand of high‐density memory with low‐power consumption. In particular, decimal system of the new computers instead of binary system could be developed if ten nonvolatile states are realized. Here, a general remanent magnetism engineering method is proposed for realizing multiple reliable magnetic and resistance states, not depending on a specific material or device structure. Especially, as a proof‐of‐concept demonstration, ten states of nonvolatile memory based on the manipulation of ferromagnetic remanent magnetization have been revealed in both Co/Pt magnetic multilayers with strong perpendicular magnetic anisotropy and MgO‐based magnetic tunneling junctions at room temperature. Considering ferromagnets have been one of the key factors that enabled the information revolution from its inception, this state‐of‐the‐art remanent magnetism engineering approach has a very broad application prospect in the field of spintronics.