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Quantum‐Tunneling Metal‐Insulator‐Metal Diodes Made by Rapid Atmospheric Pressure Chemical Vapor Deposition
Author(s) -
Alshehri Abdullah H.,
Mistry Kissan,
Nguyen Viet Huong,
Ibrahim Khaled H.,
MuñozRojas David,
Yavuz Mustafa,
Musselman Kevin P.
Publication year - 2019
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201805533
Subject(s) - materials science , chemical vapor deposition , quantum tunnelling , metal insulator metal , optoelectronics , insulator (electricity) , diode , atomic layer deposition , electrode , fabrication , quantum efficiency , atmospheric pressure , nanotechnology , layer (electronics) , voltage , capacitor , medicine , chemistry , physics , alternative medicine , oceanography , quantum mechanics , pathology , geology
Abstract A quantum‐tunneling metal‐insulator‐metal (MIM) diode is fabricated by atmospheric pressure chemical vapor deposition (AP‐CVD) for the first time. This scalable method is used to produce MIM diodes with high‐quality, pinhole‐free Al 2 O 3 films more rapidly than by conventional vacuum‐based approaches. This work demonstrates that clean room fabrication is not a prerequisite for quantum‐enabled devices. In fact, the MIM diodes fabricated by AP‐CVD show a lower effective barrier height (2.20 eV) at the electrode–insulator interface than those fabricated by conventional plasma‐enhanced atomic layer deposition (2.80 eV), resulting in a lower turn on voltage of 1.4 V, lower zero‐bias resistance, and better asymmetry of 107.