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Photoquantum Hall Effect and Light‐Induced Charge Transfer at the Interface of Graphene/InSe Heterostructures
Author(s) -
Bhuiyan Mahabub A.,
Kudrynskyi Zakhar R.,
Mazumder Debarati,
Greener Jake D. G.,
Makarovsky Oleg,
Mellor Christopher J.,
Vdovin Evgeny E.,
Piot Benjamin A.,
Lobanova Inna I.,
Kovalyuk Zakhar D.,
Nazarova Marina,
Mishchenko Artem,
Novoselov Kostya S.,
Cao Yang,
Eaves Laurence,
Yusa Go,
Patanè Amalia
Publication year - 2019
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201805491
Subject(s) - graphene , materials science , heterojunction , optoelectronics , van der waals force , photoconductivity , semiconductor , charge carrier , quantum hall effect , photovoltaic effect , nanotechnology , condensed matter physics , photovoltaic system , magnetic field , physics , molecule , ecology , quantum mechanics , biology
The transfer of electronic charge across the interface of two van der Waals crystals can underpin the operation of a new class of functional devices. Among van der Waals semiconductors, an exciting and rapidly growing development involves the “post‐transition” metal chalcogenide InSe. Here, field effect phototransistors are reported where single layer graphene is capped with n‐type InSe. These device structures combine the photosensitivity of InSe with the unique electrical properties of graphene. It is shown that the light‐induced transfer of charge between InSe and graphene offers an effective method to increase or decrease the carrier density in graphene, causing a change in its resistance that is gate‐controllable and only weakly dependent on temperature. The charge transfer at the InSe/graphene interface is probed by Hall effect and photoconductivity measurmentes and it is demonstrated that light can induce a sign reversal of the quantum Hall voltage and photovoltaic effects in the graphene layer. These findings demonstrate the potential of light‐induced charge transfer in gate‐tunable InSe/graphene phototransistors for optoelectronics and quantum metrology.