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Complementary Logic with Voltage Zero‐Loss and Nano‐Watt Power via Configurable MoS 2 /WSe 2 Gate
Author(s) -
Zhang Heng,
Li Chao,
Wang Jianlu,
Hu Weida,
Zhang David Wei,
Zhou Peng
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201805171
Subject(s) - nand gate , inverter , materials science , logic gate , transistor , pass transistor logic , electronic circuit , voltage , electrical engineering , electronic engineering , optoelectronics , engineering
Due to the development of 2D material transistors research and preparation process, many fundamental logic units, like inverter and NAND gate, have been achieved to promote large‐scale integration. However, there are critical challenges like voltage loss and large dynamic power consumption for integrated circuits based on 2D semiconductors. Here high‐performance logic devices via different MoS 2 ‐WSe 2 configurations, a MoS 2 ‐WSe 2 complementary logic transmission gate with the ability to transport electrical level without any voltage loss and a MoS 2 ‐WSe 2 complementary logic inverter with small dynamic power consumption and maximum voltage gain of 18 are demonstrated. Furthermore, an essential logic unit like Schmidt flip‐flop is put forward by combining MoS 2 ‐WSe 2 inverter and graphene floating gate. The realization of various logics achieved by different MoS 2 ‐WSe 2 configurations makes it much easier to fabricate multifunctional system on a chip, which has a significant meaning for the development of high density integrated circuits.