Embedded Dipole Self‐Assembled Monolayers for Contact Resistance Tuning in p‐Type and n‐Type Organic Thin Film Transistors and Flexible Electronic Circuits

Based on the powerful concept of embedded dipole self‐assembled monolayers (SAMs), highly conductive interfacial layers are designed, which allow tuning the contact resistance of organic thin‐film transistors over three orders of magnitude with minimum values well below 1 kΩ cm. This not only permits the realization of highly competitive p‐type (pentacene‐based) devices on rigid as well as flexible substrates, but also enables the realization of n‐type (C 60 ‐based) transistors with comparable characteristics utilizing the same electrode material (Au). As prototypical examples for the high potential of the presented SAMs in more complex device structures, flexible organic inverters with static gains of 220 V/V and a 5‐stage ring‐oscillator operated below 4 V with a stage frequency in the range of the theoretically achievable maximum are fabricated. Employing a variety of complementary experimental and modeling techniques, it is shown that contact resistances are reduced by i) eliminating the injection barrier through a suitable dipole orientation, and by ii) boosting the transmission of charge carriers through a deliberate reduction of the SAM thickness. Notably, the embedding of the dipolar group into the backbones of the SAM‐forming molecules allows exploiting their beneficial effects without modifying the growth of the active layer.