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Ionic‐Liquid Gating of InAs Nanowire‐Based Field‐Effect Transistors
Author(s) -
Lieb Johanna,
Demontis Valeria,
Prete Domenic,
Ercolani Daniele,
Zannier Valentina,
Sorba Lucia,
Ono Shimpei,
Beltram Fabio,
Sacépé Benjamin,
Rossella Francesco
Publication year - 2019
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201804378
Subject(s) - nanowire , materials science , gating , bioelectronics , field effect transistor , transconductance , ionic liquid , semiconductor , transistor , substrate (aquarium) , modulation (music) , optoelectronics , nanotechnology , ionic bonding , voltage , ion , biosensor , electrical engineering , physics , chemistry , oceanography , engineering , biology , physiology , biochemistry , quantum mechanics , catalysis , geology , acoustics
Abstract Here, the operation of a field‐effect transistor based on a single InAs nanowire gated by an ionic liquid is reported. Liquid gating yields very efficient carrier modulation with a transconductance value 30 times larger than standard back gating with the SiO 2 /Si ++ substrate. Thanks to this wide modulation, the controlled evolution from semiconductor to metallic‐like behavior in the nanowire is shown. This work provides the first systematic study of ionic‐liquid gating in electronic devices based on individual III–V semiconductor nanowires: this architecture opens the way to a wide range of fundamental and applied studies from the phase transitions to bioelectronics.