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Dielectric Dispersion and High Field Response of Multilayer Hexagonal Boron Nitride
Author(s) -
Ahmed Faisal,
Heo Sunwoo,
Yang Zheng,
Ali Fida,
Ra Chang Ho,
Lee HoIn,
Taniguchi Takashi,
Hone James,
Lee Byoung Hun,
Yoo Won Jong
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201804235
Subject(s) - materials science , dielectric , capacitance , dispersion (optics) , hexagonal boron nitride , boron nitride , optoelectronics , dissipation , dielectric loss , condensed matter physics , nanotechnology , optics , graphene , chemistry , physics , electrode , thermodynamics
The dielectric dispersion of a material holds significant importance for the understanding of basic material characteristics and the design parameters of a functional device. Here, the dielectric dispersion characteristics of multilayer hexagonal boron nitride (hBN) using time domain reflectometry under an extended device operating frequency range up to 100 MHz are studied. Contrary to what is previously reported, the capacitance, hence the effective dielectric constant, of hBN decreases with the increase of frequency above the MHz range, indicating heat dissipation in lossy hBN dielectric. Furthermore, hBN shows stubborn dielectric characteristics with temperature changes that confirm its thermal stability in extreme operating conditions. The charge carriers in hBN are transported by Fowler–Nordhiem tunneling with increasing the electrical field. Lastly, hBN endures electrical field of 7.8 MV cm −1 that implies its potential use as a promising dielectric material. These results will benefit the research and development of hBN supported high‐speed electronics operated at high‐frequency conditions for energy‐efficient device applications.