Premium
Efficient and Stable Nonfullerene‐Graded Heterojunction Inverted Perovskite Solar Cells with Inorganic Ga 2 O 3 Tunneling Protective Nanolayer
Author(s) -
Ma Junjie,
Zheng Meijuan,
Chen Cong,
Zhu Ziqiang,
Zheng Xiaolu,
Chen Zhiliang,
Guo Yaxiong,
Liu Chang,
Yan Yanfa,
Fang Guojia
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201804128
Subject(s) - materials science , passivation , perovskite (structure) , heterojunction , energy conversion efficiency , fabrication , optoelectronics , nanotechnology , electrode , band gap , chemical engineering , layer (electronics) , chemistry , medicine , alternative medicine , pathology , engineering
Inverted planar perovskite solar cells (PSCs) exhibit advantages in terms of simple device fabrication, good reproducibility, and less hysteresis. However, there still remain challenges to passivate the trap states within the perovskite film and reduce interface instability arising from penetration of moisture and the diffusion of metal electrode. In this work, perovskite passivation is reported using gradiently distributed nonfullerene electron‐rich Lewis bases small molecule IDIC (a π‐conjugated Lewis base: indacenodithiophene end‐capped with 1.1‐dicyanomethylene‐3‐indanone), which is realized through an antisolvent dropping process. Additionally, an inorganic wide band gap Ga 2 O 3 is introduced as a tunneling nanolayer into interface between the metal electrode and electron transport layer that effectively passivate interface and mitigate moisture and metal ion diffusion. These treatments enable the fabrication of CH 3 NH 3 PbI 3 ‐based inverted PSCs with excellent power conversion efficiencies up to 19.86% as well as enhanced ambient stability. This work provides new strategies to improve the performance and stability for the inverted PSCs.