Premium
2D Group IVB Transition Metal Dichalcogenides
Author(s) -
Yan Chaoyi,
Gong Chuanhui,
Wangyang Peihua,
Chu Junwei,
Hu Kai,
Li Chaobo,
Wang Xuepeng,
Du Xinchuan,
Zhai Tianyou,
Li Yanrong,
Xiong Jie
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201803305
Subject(s) - materials science , transition metal , van der waals force , dangling bond , nanotechnology , semiconductor , group (periodic table) , engineering physics , chemical physics , silicon , optoelectronics , molecule , catalysis , physics , chemistry , biochemistry , quantum mechanics
Semiconductor technology is currently impaired by the surface dangling bond of materials, which introduces scattering and interface traps. 2D materials, especially transition metal dichalcogenides (TMDs) with different main groups, have settled this issue by utilizing unique atomically smooth surfaces and van der Waals (vdW) structures. Over the past few decades, many processes for exploring new materials, manipulating physical properties, and synthesizing single crystals have been developed. Among these 2D materials, group IVB TMDs are distinguished for their splendid physical properties, including ultrahigh mobility, charge density wave, superconducting transitions, etc. Here, the recent advances in group IVB TMDs are reviewed, which offer easy access to next generation nano‐, opto‐, thermal‐electronic, energy storage and conversion applications. Both the advantages and challenges of these studies are summarized to further clarify existing problems.