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Dipole Formation at the MoO 3 /Conjugated Polymer Interface
Author(s) -
Yin Yanting,
Sibley Alex,
Quinton Jamie S.,
Lewis David A.,
Andersson Gunther G.
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201802825
Subject(s) - materials science , dipole , work function , active layer , heterojunction , polymer solar cell , penetration (warfare) , anode , layer (electronics) , polymer , electron , evaporation , metal , optoelectronics , organic solar cell , conjugated system , chemical engineering , nanotechnology , composite material , electrode , organic chemistry , chemistry , metallurgy , thin film transistor , physics , operations research , quantum mechanics , engineering , thermodynamics
MoO 3 is known as high work function (WF) transparent metal oxides. It is used as anode buffer layer in organic based solar cells because of its capability to extract electrons and inject holes from the active layer due to its high WF. Here a broad range of techniques is used to determine the energy levels of the bulk heterojunction (BHJ) and MoO 3 to determine that the minimum deposition thickness to achieve a closed layer is 1 nm due to penetration of the evaporated MoO 3 into the BHJ. The investigation shows that upon evaporation of the MoO 3 , a strong dipole is formed at the extended interface between the active layer and the MoO 3 and that the strength of the dipole increases with increasing thickness of the MoO 3 layer and saturates at 2.2 eV at a thickness around 3 nm.