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Submillimeter 2D Bi 2 Se 3 Flakes toward High‐Performance Infrared Photodetection at Optical Communication Wavelength
Author(s) -
Wang Fakun,
Li Leigang,
Huang Wenjuan,
Li Liang,
Jin Bao,
Li Huiqiao,
Zhai Tianyou
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201802707
Subject(s) - responsivity , materials science , photodetector , photodetection , optoelectronics , infrared , terahertz radiation , quantum efficiency , wavelength , nucleation , band gap , optics , physics , thermodynamics
Infrared detection at optical communication wavelength is of great significance because of their diverse commercial and military communication applications. The layered Bi 2 Se 3 with a narrow band gap of 0.3 eV is regarded as a promising candidate toward high‐performance terahertz to infrared applications. However, the controllable synthesis of large‐size ultrathin Bi 2 Se 3 flakes remains a challenge owing to complex nucleation process and infrared telecommunication photodetectors based on Bi 2 Se 3 flakes are rarely reported. Here, large size (submillimeter: 0.2–0.4 mm in lateral dimensions) and ultrathin (thickness: 3 nm to few nanometers) 2D Bi 2 Se 3 flakes with high crystal quality are obtained by suppressing the nucleation density. More importantly, back‐gate field‐effect transistor based on Bi 2 Se 3 flake exhibits an ultrahigh on/off current ratio of 10 6 and competitive mobility of 39.4 cm 2 V −1 s −1 . Moreover, excellent on/off ratio of 972.5, responsivity of 23.8 A W −1 , and external quantum efficiency of 2035% are obtained from Bi 2 Se 3 ‐based photodetector at 1456 nm in the E‐band of the telecommunication range. With controlled morphology and excellent photoresponse performance, the Bi 2 Se 3 photodetector shows great potential in the optoelectronic field including communications, military, and remote sensing.