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p‐Doping of Copper(I) Thiocyanate (CuSCN) Hole‐Transport Layers for High‐Performance Transistors and Organic Solar Cells
Author(s) -
Wijeyasinghe Nilushi,
Eisner Flurin,
Tsetseris Leonidas,
Lin YenHung,
Seitkhan Akmaral,
Li Jinhua,
Yan Feng,
Solomeshch Olga,
Tessler Nir,
Patsalas Panos,
Anthopoulos Thomas D.
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201802055
Subject(s) - materials science , doping , band gap , semiconductor , optoelectronics , equivalent series resistance , electron mobility , fermi level , transistor , organic solar cell , electrical engineering , electron , polymer , physics , quantum mechanics , voltage , composite material , engineering
The ability to tune the electronic properties of soluble wide bandgap semiconductors is crucial for their successful implementation as carrier‐selective interlayers in large area opto/electronics. Herein the simple, economical, and effective p‐doping of one of the most promising transparent semiconductors, copper(I) thiocyanate (CuSCN), using C 60 F 48 is reported. Theoretical calculations combined with experimental measurements are used to elucidate the electronic band structure and density of states of the constituent materials and their blends. Obtained results reveal that although the bandgap (3.85 eV) and valence band maximum (−5.4 eV) of CuSCN remain unaffected, its Fermi energy shifts toward the valence band edge upon C 60 F 48 addition—an observation consistent with p ‐ type doping. Transistor measurements confirm the p‐doping effect while revealing a tenfold increase in the channel's hole mobility (up to 0.18 cm 2 V −1 s −1 ), accompanied by a dramatic improvement in the transistor's bias‐stress stability. Application of CuSCN:C 60 F 48 as the hole‐transport layer (HTL) in organic photovoltaics yields devices with higher power conversion efficiency, improved fill factor, higher shunt resistance, and lower series resistance and dark current, as compared to control devices based on pristine CuSCN or commercially available HTLs.