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High‐Temperature‐Triggered Thermally Degradable Electronics Based on Flexible Silicon Nanomembranes
Author(s) -
Li Gongjin,
Song Enming,
Huang Gaoshan,
Guo Qinglei,
Ma Fei,
Zhou Bin,
Mei Yongfeng
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201801448
Subject(s) - materials science , transient (computer programming) , electronics , degradation (telecommunications) , silicon , characterization (materials science) , nanotechnology , optoelectronics , electronic engineering , electrical engineering , computer science , engineering , operating system
An advanced transient approach enables the sudden degradation and subsequent disappearance of device‐grade electronic systems on a temporary platform with limited remains over a desired period for long‐term stable operation. To satisfy the requirements for flexible devices in transient electronics capable of working at high temperature, transient Si‐nanomembrane (Si‐NM) electronics integrated with high‐temperature degradable poly‐α‐methylstyrene (PAMS) are presented. Systematic experimental studies suggest that a 4 µm thick PAMS interlayer in the Si‐NM device ensures stable operation below the decomposition temperature of PAMS (≈300 °C), while the device undergoes transient process when triggered at higher temperature. Experimental characterization and theoretical modeling reveal the essential properties of the flexible device and its failure mechanism. Demonstrations of such a transient component in high‐temperature electronics highlight the potential advantages in the demands for circuit safeguards, information security, and sensing/control systems.