z-logo
Premium
A Facet‐Dependent Schottky‐Junction Electron Shuttle in a BiVO 4 {010}–Au–Cu 2 O Z‐Scheme Photocatalyst for Efficient Charge Separation
Author(s) -
Zhou Chenguang,
Wang Shaomang,
Zhao Zongyan,
Shi Zhan,
Yan Shicheng,
Zou Zhigang
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201801214
Subject(s) - facet (psychology) , materials science , schottky barrier , semiconductor , electron , photocatalysis , optoelectronics , schottky diode , electron transfer , photochemistry , physics , chemistry , catalysis , psychology , social psychology , biochemistry , personality , diode , quantum mechanics , big five personality traits
Interfacial charge separation and transfer are the main challenges of efficient semiconductor‐based Z‐scheme photocatalytic systems. Here, it is discovered that a Schottky junction at the interface between the BiVO 4 {010} facet and Au is an efficient electron‐transfer route useful for constructing a high‐performance BiVO 4 {010}–Au–Cu 2 O Z‐scheme photocatalyst. Spectroscopic and computational studies reveal that hot electrons in BiVO 4 {010} more easily cross the Schottky barrier to expedite the migration from BiVO 4 {010} to Au and are subsequently captured by the excited holes in Cu 2 O. This crystal‐facet‐dependent electron shuttle allows the long‐lived holes and electrons to stay in the valence band of BiVO 4 and conduction band of Cu 2 O, respectively, contributing to improved light‐driven CO 2 reduction. This unique semiconductor crystal‐facet sandwich structure will provide an innovative strategy for rational design of advanced Z‐scheme photocatalysts.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here