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A Facet‐Dependent Schottky‐Junction Electron Shuttle in a BiVO 4 {010}–Au–Cu 2 O Z‐Scheme Photocatalyst for Efficient Charge Separation
Author(s) -
Zhou Chenguang,
Wang Shaomang,
Zhao Zongyan,
Shi Zhan,
Yan Shicheng,
Zou Zhigang
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201801214
Subject(s) - facet (psychology) , materials science , schottky barrier , semiconductor , electron , photocatalysis , optoelectronics , schottky diode , electron transfer , photochemistry , physics , chemistry , catalysis , psychology , social psychology , biochemistry , personality , diode , quantum mechanics , big five personality traits
Interfacial charge separation and transfer are the main challenges of efficient semiconductor‐based Z‐scheme photocatalytic systems. Here, it is discovered that a Schottky junction at the interface between the BiVO 4 {010} facet and Au is an efficient electron‐transfer route useful for constructing a high‐performance BiVO 4 {010}–Au–Cu 2 O Z‐scheme photocatalyst. Spectroscopic and computational studies reveal that hot electrons in BiVO 4 {010} more easily cross the Schottky barrier to expedite the migration from BiVO 4 {010} to Au and are subsequently captured by the excited holes in Cu 2 O. This crystal‐facet‐dependent electron shuttle allows the long‐lived holes and electrons to stay in the valence band of BiVO 4 and conduction band of Cu 2 O, respectively, contributing to improved light‐driven CO 2 reduction. This unique semiconductor crystal‐facet sandwich structure will provide an innovative strategy for rational design of advanced Z‐scheme photocatalysts.