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Fully Transparent p‐MoTe 2 2D Transistors Using Ultrathin MoO x /Pt Contact Media for Indium‐Tin‐Oxide Source/Drain
Author(s) -
Cho Yongjae,
Park Ji Hoon,
Kim Minju,
Jeong Yeonsu,
Ahn Jongtae,
Kim Taeyoung,
Choi Hyunyong,
Yi Yeonjin,
Im Seongil
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201801204
Subject(s) - materials science , optoelectronics , thin film transistor , indium tin oxide , indium , band gap , thin film , electron mobility , diode , semiconductor , field effect transistor , nanotechnology , transistor , layer (electronics) , electrical engineering , engineering , voltage
Since transition metal dichalcogenide (TMD) semiconductors are found as 2D van der Waals materials with a discrete energy bandgap, many 2D‐like thin field effect transistors (FETs) and PN diodes are reported as prototype electrical and optoelectronic devices. As a potential application of display electronics, transparent 2D FET devices are also reported recently. Such transparent 2D FETs are very few in report, yet no p‐type channel 2D‐like FETs are seen. Here, 2D‐like thin transparent p‐channel MoTe 2 FETs with oxygen (O 2 ) plasma‐induced MoO x /Pt/indium‐tin‐oxide (ITO) contact are reported for the first time. For source/drain contact, 60 s short O 2 plasma and ultrathin Pt‐deposition processes on MoTe 2 surface are sequentially introduced before ITO thin film deposition and patterning. As a result, almost transparent 2D FETs are obtained with a decent mobility of ≈5 cm 2 V −1 s −1 , a high ON/OFF current ratio of ≈10 5 , and 70% transmittance. In particular, for normal MoTe 2 FETs without ITO, O 2 plasma process greatly improves the hole injection efficiency and device mobility (≈60 cm 2 V −1 s −1 ), introducing ultrathin MoO x between Pt source/drain and MoTe 2 . As a final device application, a photovoltaic current modulator, where the transparent FET stably operates as gated by photovoltaic effects, is integrated.