Premium
Low‐Voltage, Optoelectronic CH 3 NH 3 PbI 3− x Cl x Memory with Integrated Sensing and Logic Operations
Author(s) -
Zhou Feichi,
Liu Yanghui,
Shen Xinpeng,
Wang Mengye,
Yuan Fang,
Chai Yang
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201800080
Subject(s) - materials science , optoelectronics , voltage , resistive touchscreen , signal (programming language) , internet of things , computer data storage , electrical engineering , computer science , computer hardware , embedded system , engineering , programming language
Nonvolatile optoelectronic memories integrated with the functions of sensing, data storage, and data processing are promising for the potential Internet of things (IoT) applications. To meet the requirements of IoT devices, multifunctional memory devices with low power consumption and secure data storage are highly desirable. This study demonstrates an optoelectronic resistive switching memory integrated with sensing and logic operations by adopting organic–inorganic hybrid CH 3 NH 3 PbI 3− x Cl x perovskites, which possess unusual defect physics and excellent light absorption. The CH 3 NH 3 PbI 3− x Cl x cell exhibits low operation voltage of 0.1 V with the assistance of light illumination, long‐term retention property, and multiple resistance states. Its unique optoelectronic characteristics enable to perform logic operation for inputting one electrical pulse and one optical signal, and detect the coincidence of electrical and optical signal as well. This design provides possibilities for smart sensor in IoT application.