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Optoelectronic Materials: Ultrathin 2D GeSe 2 Rhombic Flakes with High Anisotropy Realized by Van der Waals Epitaxy (Adv. Funct. Mater. 47/2017)
Author(s) -
Zhou Xing,
Hu Xiaozong,
Zhou Shasha,
Zhang Qi,
Li Huiqiao,
Zhai Tianyou
Publication year - 2017
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201770279
Subject(s) - materials science , rhombus , epitaxy , van der waals force , anisotropy , optoelectronics , responsivity , optics , nanotechnology , photodetector , physics , layer (electronics) , molecule , geometry , mathematics , quantum mechanics
A new member (GeSe 2 ) of the 2D material family is described by Tianyou Zhai and co‐workers in article number 1703858 . For the first time, ultrathin single‐crystalline β ‐GeSe 2 rhombuses (≈7 nm) are realized by van der Waals epitaxy with halide‐assistance. A photo‐detector based on a GeSe 2 rhombus shows a high responsivity of 2.5 A W −1 and fast response of ≈0.2 s.