Optoelectronic Materials: Ultrathin 2D GeSe 2  Rhombic Flakes with High Anisotropy Realized by Van der Waals Epitaxy (Adv. Funct. Mater. 47/2017) | Zendy

Zhou Xing | Zendy; Hu Xiaozong | Zendy; Zhou Shasha | Zendy; Zhang Qi | Zendy; Li Huiqiao | Zendy; Zhai Tianyou | Zendy

Premium

Optoelectronic Materials: Ultrathin 2D GeSe 2 Rhombic Flakes with High Anisotropy Realized by Van der Waals Epitaxy (Adv. Funct. Mater. 47/2017)

Author(s) -

Zhou Xing,

Hu Xiaozong,

Zhou Shasha,

Zhang Qi,

Li Huiqiao,

Zhai Tianyou

Publication year - 2017

Publication title -

advanced functional materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 6.069

H-Index - 322

eISSN - 1616-3028

pISSN - 1616-301X

DOI - 10.1002/adfm.201770279

Subject(s) - materials science , rhombus , epitaxy , van der waals force , anisotropy , optoelectronics , responsivity , optics , nanotechnology , photodetector , physics , layer (electronics) , molecule , geometry , mathematics , quantum mechanics

A new member (GeSe 2 ) of the 2D material family is described by Tianyou Zhai and co‐workers in article number 1703858 . For the first time, ultrathin single‐crystalline β ‐GeSe 2 rhombuses (≈7 nm) are realized by van der Waals epitaxy with halide‐assistance. A photo‐detector based on a GeSe 2 rhombus shows a high responsivity of 2.5 A W −1 and fast response of ≈0.2 s.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research