LEDs: High‐Efficiency and Stable Quantum Dot Light‐Emitting Diodes Enabled by a Solution‐Processed Metal‐Doped Nickel Oxide Hole Injection Interfacial Layer (Adv. Funct. Mater. 42/2017) | Zendy

Cao Fan | Zendy; Wang Haoran | Zendy; Shen Piaoyang | Zendy; Li Xiaomin | Zendy; Zheng Yanqiong | Zendy; Shang Yuequn | Zendy; Zhang Jianhua | Zendy; Ning Zhijun | Zendy; Yang Xuyong | Zendy

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LEDs: High‐Efficiency and Stable Quantum Dot Light‐Emitting Diodes Enabled by a Solution‐Processed Metal‐Doped Nickel Oxide Hole Injection Interfacial Layer (Adv. Funct. Mater. 42/2017)

Author(s) -

Cao Fan,

Wang Haoran,

Shen Piaoyang,

Li Xiaomin,

Zheng Yanqiong,

Shang Yuequn,

Zhang Jianhua,

Ning Zhijun,

Yang Xuyong

Publication year - 2017

Publication title -

advanced functional materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 6.069

H-Index - 322

eISSN - 1616-3028

pISSN - 1616-301X

DOI - 10.1002/adfm.201770253

Subject(s) - materials science , pedot:pss , quantum dot , non blocking i/o , optoelectronics , light emitting diode , doping , brightness , diode , layer (electronics) , oled , nickel , oxide , nickel oxide , quantum efficiency , optics , nanotechnology , metallurgy , biochemistry , chemistry , catalysis , physics

A Cu‐doped, NiO‐based quantum dot light‐emitting diode (QLED) reported by Xuyong Yang and co‐workers in article number 1704278 exhibits a significant operating lifetime enhancement compared with organic PEDOT:PSS‐based QLEDs. Relying on an inorganic hole transport layer, the device's quantum dots retain their brightness for an extended time period. This is in contrast to light from a PEDOT:PSS‐based QLED shown in the upper‐left corner of the image.

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