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LEDs: High‐Efficiency and Stable Quantum Dot Light‐Emitting Diodes Enabled by a Solution‐Processed Metal‐Doped Nickel Oxide Hole Injection Interfacial Layer (Adv. Funct. Mater. 42/2017)
Author(s) -
Cao Fan,
Wang Haoran,
Shen Piaoyang,
Li Xiaomin,
Zheng Yanqiong,
Shang Yuequn,
Zhang Jianhua,
Ning Zhijun,
Yang Xuyong
Publication year - 2017
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201770253
Subject(s) - materials science , pedot:pss , quantum dot , non blocking i/o , optoelectronics , light emitting diode , doping , brightness , diode , layer (electronics) , oled , nickel , oxide , nickel oxide , quantum efficiency , optics , nanotechnology , metallurgy , biochemistry , chemistry , catalysis , physics
A Cu‐doped, NiO‐based quantum dot light‐emitting diode (QLED) reported by Xuyong Yang and co‐workers in article number 1704278 exhibits a significant operating lifetime enhancement compared with organic PEDOT:PSS‐based QLEDs. Relying on an inorganic hole transport layer, the device's quantum dots retain their brightness for an extended time period. This is in contrast to light from a PEDOT:PSS‐based QLED shown in the upper‐left corner of the image.