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Lasers: Manipulable and Hybridized, Ultralow‐Threshold Lasing in a Plasmonic Laser Using Elliptical InGaN/GaN Nanorods (Adv. Funct. Mater. 37/2017)
Author(s) -
Tao Tao,
Zhi Ting,
Liu Bin,
Dai Jiangping,
Zhuang Zhe,
Xie Zili,
Chen Peng,
Ren Fangfang,
Chen Dunjun,
Zheng Youdou,
Zhang Rong
Publication year - 2017
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201770221
Subject(s) - nanolaser , lasing threshold , materials science , nanorod , optoelectronics , plasmon , laser , semiconductor , gallium nitride , semiconductor laser theory , wavelength , nanotechnology , optics , layer (electronics) , physics
A sub‐wavelength plasmonic nanolaser with hybrid metal‐oxide‐semiconductor (MOS) structures can realize single‐mode and multi‐mode lasing by manipulating size and shape of the III‐nitride semiconductor nanorods, as demonstrated by Bin Liu, R. Zhang and co‐workers in article number 1703198 . This finding provides innovative insight towards next‐generation optoelectronic and information devices.