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Light‐Emitting Diodes: Self‐Doping Cathode Interfacial Material Simultaneously Enabling High Electron Mobility and Powerful Work Function Tunability for High‐Efficiency All‐Solution‐Processed Polymer Light‐Emitting Diodes (Adv. Funct. Mater. 26/2017)
Author(s) -
Yin Xiaojun,
Xie Guohua,
Peng Yuhao,
Wang Bowen,
Chen Tianhao,
Li Shuqi,
Zhang Wenhao,
Wang Lei,
Yang Chuluo
Publication year - 2017
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201770160
Subject(s) - materials science , cathode , optoelectronics , diode , doping , work function , light emitting diode , quantum efficiency , electron , electron mobility , polymer , layer (electronics) , nanotechnology , composite material , physics , quantum mechanics , chemistry
In article number 1700695 , a self‐doping cathode interfacial layer (CIL) of Tm‐TfOH screened from a variety of pyridinium salts is reported by Lei Wang, Chuluo Yang, and co‐workers, which enables both high electron mobility and powerful work functions tunability simultaneously. The resulting light‐emitting diodes achieve a very low driving voltage of 2.9 V at 1000 cd m −2 , and high external quantum efficiency of 3.5 % even in up to 85 nm thick films of CIL.
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