Memory Devices: One‐Step All‐Solution‐Based Au–GO Core–Shell Nanosphere Active Layers in Nonvolatile ReRAM Devices (Adv. Funct. Mater. 10/2017) | Zendy

Rani Adila | Zendy; Velusamy Dhinesh Babu | Zendy; Marques Mota Filipe | Zendy; Jang Yoon Hee | Zendy; Kim Richard Hahnkee | Zendy; Park Cheolmin | Zendy; Kim Dong Ha | Zendy

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Memory Devices: One‐Step All‐Solution‐Based Au–GO Core–Shell Nanosphere Active Layers in Nonvolatile ReRAM Devices (Adv. Funct. Mater. 10/2017)

Author(s) -

Rani Adila,

Velusamy Dhinesh Babu,

Marques Mota Filipe,

Jang Yoon Hee,

Kim Richard Hahnkee,

Park Cheolmin,

Kim Dong Ha

Publication year - 2017

Publication title -

advanced functional materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 6.069

H-Index - 322

eISSN - 1616-3028

pISSN - 1616-301X

DOI - 10.1002/adfm.201770063

Subject(s) - materials science , bistability , non volatile memory , resistive random access memory , optoelectronics , nanotechnology , graphene , dielectric , voltage , electrical engineering , engineering

In article number 1604604, Cheolim Park, Dong Ha Kim, and co‐workers report nonvolatile flexible ReRAM devices utilizing Au nanoparticles‐graphene oxide core@shell nanostructures as dielectric layers. Obtained via an allsolution‐based one‐step process, the devices showed reliable bistable switching behaviors with ON/OFF ratio of ∼10 3 , relatively low operating voltage (−2.5 V) at room temperature, remarkable robustness over 100 endurance cycles, and a retention of 10 3 s.

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