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Memory Devices: One‐Step All‐Solution‐Based Au–GO Core–Shell Nanosphere Active Layers in Nonvolatile ReRAM Devices (Adv. Funct. Mater. 10/2017)
Author(s) -
Rani Adila,
Velusamy Dhinesh Babu,
Marques Mota Filipe,
Jang Yoon Hee,
Kim Richard Hahnkee,
Park Cheolmin,
Kim Dong Ha
Publication year - 2017
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201770063
Subject(s) - materials science , bistability , non volatile memory , resistive random access memory , optoelectronics , nanotechnology , graphene , dielectric , voltage , electrical engineering , engineering
In article number 1604604, Cheolim Park, Dong Ha Kim, and co‐workers report nonvolatile flexible ReRAM devices utilizing Au nanoparticles‐graphene oxide core@shell nanostructures as dielectric layers. Obtained via an allsolution‐based one‐step process, the devices showed reliable bistable switching behaviors with ON/OFF ratio of ∼10 3 , relatively low operating voltage (−2.5 V) at room temperature, remarkable robustness over 100 endurance cycles, and a retention of 10 3 s.