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Long‐Range Nonvolatile Electric Field Effect in Epitaxial Fe/Pb(Mg 1/3 Nb 2/3 ) 0.7 Ti 0.3 O 3 Heterostructures
Author(s) -
Zhou Cai,
Shen Lvkang,
Liu Ming,
Gao Cunxu,
Jia Chenglong,
Jiang Changjun,
Xue Desheng
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201707027
Subject(s) - materials science , condensed matter physics , multiferroics , ferroelectricity , electric field , ferromagnetic resonance , magnetism , magnetocrystalline anisotropy , ferromagnetism , spintronics , magnetoelectric effect , magnetic anisotropy , optoelectronics , magnetic field , dielectric , magnetization , physics , quantum mechanics
Abstract One of the ideal candidates of using electric field to manipulate magnetism is the recently developed multiferroics with emergent coupling of magnetism and electricity, particularly in synthesizing artificial nanoscale ferroelectric and ferromagnetic materials. Here, a long‐range nonvolatile electric field effect is investigated in Fe/Pb(Mg 1/3 Nb 2/3 ) 0.7 Ti 0.3 O 3 heterostructure using the dependence of the magnon‐driven magnetoelectric coupling on the epitaxial Fe thin film (4–30 nm) thickness at room temperature using measurements based on the ferromagnetic resonance. The magnon‐driven magnetoelectric coupling tuning of the ferromagnetic resonance field shows a linear response to the electric field, with a resonance field shift that occurs under both positive and negative remanent polarizations, and demonstrates nonvolatile behavior. Moreover, the spin diffusion length of the epitaxial Fe thin film of ≈9 nm is obtained from the results that the change of the cubic magnetocrystalline anisotropy field under different electric fields varies with Fe thickness. These results are promising for the design of future multiferroic devices.