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UV‐Induced Multilevel Current Amplification Memory Effect in Zinc Oxide Rods Resistive Switching Devices
Author(s) -
Russo Paola,
Xiao Ming,
Liang Robert,
Zhou Norman Y.
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201706230
Subject(s) - materials science , optoelectronics , ultraviolet , resistive random access memory , electrode , resistive touchscreen , semiconductor , rod , oxide , zinc , medicine , alternative medicine , pathology , electrical engineering , metallurgy , engineering , chemistry
Abstract Zinc oxide (ZnO) devices represent an alternative in the semiconductor technology for their application in resistive switching memory devices and ultraviolet (UV) photodetectors due to their chemical and electrical properties. The multilevel current amplification of ZnO rods RRAM devices induced by UV light illumination is reported here for the first time. The resistive switching mechanism underlying in this type of devices is attributed to the formation of conductive filaments composed of oxygen vacancies. The analysis of the photodecay processes carried out on the devices fabricated with different electrodes shows that the type of interface (Ag/ZnO and Au/ZnO) affects the surface barrier height, which influences the photodecay rate. It is shown that by applying UV light, higher relaxation constants (slower photodecay rates) are obtained and lead to multilevel current amplification behavior.