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Dependence of Photocurrent Enhancements in Quantum Dot (QD)‐Sensitized MoS 2 Devices on MoS 2 Film Properties
Author(s) -
Gough John J.,
McEvoy Niall,
O'Brien Maria,
Bell Alan P.,
McCloskey David,
Boland John B.,
Coleman Jonathan N.,
Duesberg Georg S.,
Bradley A. Louise
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201706149
Subject(s) - materials science , monolayer , photocurrent , bilayer , optoelectronics , quantum dot , crystallite , photoluminescence , chemical vapor deposition , semiconductor , nanotechnology , photodetector , membrane , biology , metallurgy , genetics
This report demonstrates highly efficient nonradiative energy transfer (NRET) from alloyed CdSeS/ZnS semiconductor nanocrystal quantum dots (QDs) to MoS 2 films of varying layer thicknesses, including pristine monolayers, mixed monolayer/bilayer, polycrystalline bilayers, and bulk‐like thicknesses, with NRET efficiencies of over 90%. Large‐area MoS 2 films are grown on Si/SiO 2 substrates by chemical vapor deposition. Despite the ultrahigh NRET efficiencies there is no distinct increase in the MoS 2 photoluminescence intensity. However, by studying the optoelectronic properties of the MoS 2 devices before and after adding the QD sensitizing layer photocurrent enhancements as large as ≈14‐fold for pristine monolayer devices are observed, with enhancements on the order of ≈2‐fold for MoS 2 devices of mixed monolayer and bilayer thicknesses. For the polycrystalline bilayer and bulk‐like MoS 2 devices there is almost no increase in the photocurrent after adding the QDs. Industrially scalable techniques are specifically utilized to fabricate the samples studied in this report, demonstrating the viability of this hybrid structure for commercial photodetector or light harvesting applications.