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Electron Field Emission of Geometrically Modulated Monolayer Semiconductors
Author(s) -
Yang TungHan,
Chiu KuanChang,
Harn YeuWei,
Chen HanYi,
Cai RenFong,
Shyue JingJong,
Lo ShenChuan,
Wu JennMing,
Lee YiHsien
Publication year - 2018
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.201706113
Subject(s) - monolayer , materials science , semiconductor , electron , field electron emission , nanotechnology , electric field , optoelectronics , light emission , chemical physics , chemistry , physics , quantum mechanics
Electron field emission, electrons emitted from solid surfaces under high electric field, offers significant scientific interests in materials sciences and potential optoelectronics applications. 2D atomic layers, such as MoS 2 , exhibit fascinating properties for diverse applications in next‐generation nanodevices and rich physical phenomena for fundamental research. However, the study on field emission of semiconducting monolayers is lacking owing to its low efficiency and stability of electron emission. Here, electron field emission of the geometrically modulated monolayer semiconductors suspended with 1D nanoarrays is demonstrated. Chemical vapor deposition synthesis of two prototype monolayers of transition metal dichalcogenides (TMD), MoS 2 and MoSe 2 , is presented and their diverse band structures offer an ideal platform to explore the fundamental process of the electron emission in the TMD. Geometrical modulation and charge transfer of the semiconducting monolayers can be significantly tuned with the structural suspension with the 1D ZnO nanoarrays. Possible mechanisms on the enhanced electron emission of the 2D monolayers are discussed. With geometrical control of the monolayers, a highly efficient and stable electron emission of TMD monolayers is achieved in low turn‐on electric fields, enabling applications on electrons sources and opening a new avenue toward geometrically tuned atomic layers.